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Role of F on the Electrical Activation of As in Ge

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dc.contributor.authorImpellizzeri, G
dc.contributor.authorNapolitani, E
dc.contributor.authorBoninelli, S
dc.contributor.authorSullivan, James
dc.contributor.authorRoberts, Jason
dc.contributor.authorBuckman, Stephen
dc.contributor.authorRuffell, Simon
dc.contributor.authorPriolo, Francesco
dc.contributor.authorPrivitera, V
dc.date.accessioned2015-12-08T22:10:24Z
dc.date.issued2012
dc.date.updated2015-12-08T07:32:18Z
dc.description.abstractFluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal
dc.identifier.issn2162-8769
dc.identifier.urihttp://hdl.handle.net/1885/29323
dc.publisherThe Electrochemical Society
dc.sourceECS Journal of Solid State Science and Technology
dc.titleRole of F on the Electrical Activation of As in Ge
dc.typeJournal article
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage3
local.contributor.affiliationImpellizzeri, G, Universita di Catania
local.contributor.affiliationNapolitani, E, Universita di Padova
local.contributor.affiliationBoninelli, S, Universita di Catania
local.contributor.affiliationSullivan, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRoberts, Jason, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBuckman, Stephen, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationPriolo, Francesco, University of Catania
local.contributor.affiliationPrivitera, V, Universita di Catania
local.contributor.authoruidSullivan, James, u3551013
local.contributor.authoruidRoberts, Jason, u4444321
local.contributor.authoruidBuckman, Stephen, u8300485
local.contributor.authoruidRuffell, Simon, u4241699
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091204 - Elemental Semiconductors
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationu4860843xPUB64
local.identifier.citationvolume1
local.identifier.doi10.1149/2.009203jss
local.identifier.scopusID2-s2.0-84887327548
local.identifier.thomsonID000319446200015
local.type.statusPublished Version

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