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Role of F on the Electrical Activation of As in Ge

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Date

2012

Authors

Impellizzeri, G
Napolitani, E
Boninelli, S
Sullivan, James
Roberts, Jason
Buckman, Stephen
Ruffell, Simon
Priolo, Francesco
Privitera, V

Journal Title

Journal ISSN

Volume Title

Publisher

The Electrochemical Society

Abstract

Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after thermal

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Keywords

Citation

URI

http://hdl.handle.net/1885/29323

Collections

ANU Research Publications

Source

ECS Journal of Solid State Science and Technology

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1149/2.009203jss

Restricted until

2037-12-31

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