Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Effect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films

Simple item page
dc.contributor.authorElliman, Robert
dc.contributor.authorNawaz (Saleh), Muhammad
dc.contributor.authorKim, Sung-I
dc.contributor.authorVenkatachalam, Dinesh
dc.contributor.authorKim, Tae-Hyun
dc.contributor.authorBelay, Kidane
dc.coverage.spatialSan Francisco USA
dc.date.accessioned2015-12-10T22:16:47Z
dc.date.available2015-12-10T22:16:47Z
dc.date.createdApril 5-9 2010
dc.date.issued2010
dc.date.updated2016-02-24T10:00:54Z
dc.description.abstractThe forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.
dc.identifier.isbn1946-4274
dc.identifier.urihttp://hdl.handle.net/1885/51108
dc.publisherCambridge Journals
dc.relation.ispartofseriesMaterials Research Society Meeting Spring 2010
dc.sourceMaterials Research Society Symposium Proceedings
dc.source.urihttp://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7956013&fulltextType=RA&fileId=S1946427400002542
dc.subjectKeywords: Fluences; Ion fluences; NiO thin film; Production rates; Resistive switching; Switching response; Thermochemical models; Thin films; Ions
dc.titleEffect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films
dc.typeConference paper
local.bibliographicCitation.lastpage6
local.bibliographicCitation.startpage1
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationNawaz (Saleh), Muhammad, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Sung-I, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationVenkatachalam, Dinesh, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Tae-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBelay, Kidane, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidElliman, Robert, u9012877
local.contributor.authoruidNawaz (Saleh), Muhammad, u4355160
local.contributor.authoruidKim, Sung-I, u971535
local.contributor.authoruidVenkatachalam, Dinesh, u4575027
local.contributor.authoruidKim, Tae-Hyun, u3924901
local.contributor.authoruidBelay, Kidane, u3806698
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationU3488905xPUB217
local.identifier.doi10.1557/PROC-1250-G05-06
local.identifier.scopusID2-s2.0-78650324740
local.type.statusPublished Version

Downloads

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS