Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Effect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films

Thumbnail Image

Date

2010

Authors

Elliman, Robert
Nawaz (Saleh), Muhammad
Kim, Sung-I
Venkatachalam, Dinesh
Kim, Tae-Hyun
Belay, Kidane

Journal Title

Journal ISSN

Volume Title

Publisher

Cambridge Journals

Abstract

The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.

Description

Keywords

Keywords: Fluences; Ion fluences; NiO thin film; Production rates; Resistive switching; Switching response; Thermochemical models; Thin films; Ions

Citation

URI

http://hdl.handle.net/1885/51108

Collections

ANU Research Publications

Source

Materials Research Society Symposium Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1557/PROC-1250-G05-06

Restricted until

DSpace software copyright © 2002-2026 LYRASIS

abcd