Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics

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dc.contributor.authorJoyce, Hannah Jen_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorKim, Yongen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorZhang, Xinen_AU
dc.contributor.authorGuo, YaNanen_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorFickenscher, M Aen_AU
dc.contributor.authorPerera, Sen_AU
dc.contributor.authorHoang, Thang Ben_AU
dc.contributor.authorSmith, Leigh Men_AU
dc.contributor.authorJackson, Howard Een_AU
dc.contributor.authorYarrison-Rice, Jan Men_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialArlington USA
dc.date.accessioned2015-12-10T21:55:56Z
dc.date.createdAugust 18-21 2008
dc.date.issued2008
dc.date.updated2016-02-24T10:00:18Z
dc.description.abstractWe investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices.
dc.identifier.isbn9781424421046
dc.identifier.urihttp://hdl.handle.net/1885/39192
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesIEEE Conference on Nanotechnology (IEEE-NANO 2008)
dc.sourceProceedings of Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
dc.subjectKeywords: Chemical vapor deposition; Electric wire; Electrooptical devices; Gallium alloys; Growth temperature; Nanostructured materials; Nanostructures; Nanotechnology; Optical materials; Optical properties; Optoelectronic devices; Semiconducting gallium; Semicond GaAs; MOCVD; Nanowire; Photoluminescence
dc.titleGrowth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics
dc.typeConference paper
local.bibliographicCitation.lastpage62
local.bibliographicCitation.startpage59
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Yong, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZhang, Xin, University of Queensland
local.contributor.affiliationGuo, YaNan, University of Queensland
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationFickenscher, M A, University of Cincinnati
local.contributor.affiliationPerera, S, University of Cincinnati
local.contributor.affiliationHoang, Thang B , University of Cincinnati
local.contributor.affiliationSmith, Leigh M , University of Cincinnati
local.contributor.affiliationJackson, Howard E , University of Cincinnati
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami
local.contributor.authoremailu9302338@anu.edu.au
local.contributor.authoruidJoyce, Hannah J, u4193607
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidKim, Yong, u4233336
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor020504 - Photonics, Optoelectronics and Optical Communications
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationu3488905xPUB173
local.identifier.ariespublicationU3488905xPUB2980
local.identifier.doi10.1109/NANO.2008.25
local.identifier.scopusID2-s2.0-55349125712
local.identifier.uidSubmittedByu3488905
local.type.statusPublished Version

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