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Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics

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Date

2008

Authors

Joyce, Hannah J
Gao, Qiang
Kim, Yong
Jagadish, Chennupati
Zhang, Xin
Guo, YaNan
Zou, Jin
Fickenscher, M A
Perera, S
Hoang, Thang B

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices.

Description

Keywords

Keywords: Chemical vapor deposition; Electric wire; Electrooptical devices; Gallium alloys; Growth temperature; Nanostructured materials; Nanostructures; Nanotechnology; Optical materials; Optical properties; Optoelectronic devices; Semiconducting gallium; Semicond GaAs; MOCVD; Nanowire; Photoluminescence

Citation

URI

http://hdl.handle.net/1885/39192

Collections

ANU Research Publications

Source

Proceedings of Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/NANO.2008.25

Restricted until

2037-12-31

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01_Joyce_Growth,_Structural_and_Optical_2008.pdf (801.99 KB)

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