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TEMPERATURE DEPENDENT ELECTRON AND HOLE CAPTURE CROSS SECTIONS OF IRON-CONTAMINATED BORON-DOPED SILICON

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dc.contributor.authorPaudyal, Bijaya
dc.contributor.authorMcIntosh, Keith
dc.contributor.authorMacDonald, Daniel
dc.coverage.spatialPhiladelphia USA
dc.date.accessioned2015-12-07T22:16:25Z
dc.date.createdJune 7-12 2009
dc.date.issued2009
dc.date.updated2016-02-24T10:37:15Z
dc.description.abstractTemperature controlled photoconductance is applied to measure the electron and hole capture cross sections of interstitial iron and iron-boron pairs in crystalline silicon. The injection-dependent lifetime was measured before and after light soaking over
dc.identifier.isbn9781424429509
dc.identifier.urihttp://hdl.handle.net/1885/18021
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesIEEE Photovoltaic Specialists Conference (PVSC 2009)
dc.sourceProceedings of IEEE Photovoltaic Specialists Conference (PVSC 2009)
dc.subjectKeywords: Before and after; Boron defects; Boron-doped silicon; Capture cross sections; Cross-over; Crystalline silicons; Energy level; Hole capture cross sections; Interstitial iron; Light soaking; Photoconductance; Temperature dependence; Temperature dependent; T
dc.titleTEMPERATURE DEPENDENT ELECTRON AND HOLE CAPTURE CROSS SECTIONS OF IRON-CONTAMINATED BORON-DOPED SILICON
dc.typeConference paper
local.contributor.affiliationPaudyal, Bijaya, College of Engineering and Computer Science, ANU
local.contributor.affiliationMcIntosh, Keith, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.authoruidPaudyal, Bijaya, u4256160
local.contributor.authoruidMcIntosh, Keith, u4249405
local.contributor.authoruidMacDonald, Daniel, u9718154
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationu4137410xPUB3
local.identifier.doi10.1109/PVSC.2009.5411380
local.identifier.scopusID2-s2.0-77951555575
local.type.statusPublished Version

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