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TEMPERATURE DEPENDENT ELECTRON AND HOLE CAPTURE CROSS SECTIONS OF IRON-CONTAMINATED BORON-DOPED SILICON

Date

Authors

Paudyal, Bijaya

McIntosh, Keith

MacDonald, Daniel

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Temperature controlled photoconductance is applied to measure the electron and hole capture cross sections of interstitial iron and iron-boron pairs in crystalline silicon. The injection-dependent lifetime was measured before and after light soaking over

Keywords

Keywords: Before and after; Boron defects; Boron-doped silicon; Capture cross sections; Cross-over; Crystalline silicons; Energy level; Hole capture cross sections; Interstitial iron; Light soaking; Photoconductance; Temperature dependence; Temperature dependent; T

URI

http://hdl.handle.net/1885/18021

Collections

ANU Research Publications

Source

Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2009)

Type

Conference paper

DOI

10.1109/PVSC.2009.5411380

Restricted until

2037-12-31

Downloads

File

Description

01_Paudyal_TEMPERATURE_DEPENDENT_ELECTRON_2009.pdf (500.33 KB)