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Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

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dc.contributor.authorRougieux, Fiacre
dc.contributor.authorMacDonald, Daniel
dc.contributor.authorMcIntosh, Keith
dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-12-07T22:14:21Z
dc.date.issued2010
dc.date.updated2016-02-24T11:29:43Z
dc.description.abstractWe report on the formation of a lightly doped p-n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/1885/17383
dc.publisherInstitute of Physics Publishing
dc.sourceSemiconductor Science and Technology
dc.subjectKeywords: Capacitance voltage measurements; Crystalline silicons; Dopant segregation; Experimental evidence; Hot probe; Inversion layer; Metal oxide semiconductor structures; P-n junction; P-type; P-type silicon wafers; Thermal oxidation; Doping (additives); Oxidat
dc.titleCharacteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon
dc.typeJournal article
local.bibliographicCitation.issue055009
local.bibliographicCitation.startpage5
local.contributor.affiliationRougieux, Fiacre, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationMcIntosh, Keith, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.authoruidRougieux, Fiacre, u4611760
local.contributor.authoruidMacDonald, Daniel, u9718154
local.contributor.authoruidMcIntosh, Keith, u4249405
local.contributor.authoruidCuevas, Andres, u9308750
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu4963866xPUB1
local.identifier.citationvolume25
local.identifier.doi10.1088/0268-1242/25/5/055009
local.identifier.scopusID2-s2.0-77951234089
local.identifier.thomsonID000276888900009
local.type.statusPublished Version

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