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Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

Date

Authors

Rougieux, Fiacre

MacDonald, Daniel

McIntosh, Keith

Cuevas, Andres

Publisher

Institute of Physics Publishing

Abstract

We report on the formation of a lightly doped p-n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion

Keywords

Keywords: Capacitance voltage measurements; Crystalline silicons; Dopant segregation; Experimental evidence; Hot probe; Inversion layer; Metal oxide semiconductor structures; P-n junction; P-type; P-type silicon wafers; Thermal oxidation; Doping (additives); Oxidat

URI

http://hdl.handle.net/1885/17383

Collections

ANU Research Publications

Source

Semiconductor Science and Technology

Type

Journal article

DOI

10.1088/0268-1242/25/5/055009

Restricted until

2037-12-31

Downloads

File

Description

01_Rougieux_Characteristics_of_an_2010.pdf (541.79 KB)

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