Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon
Date
2010
Authors
Rougieux, Fiacre
MacDonald, Daniel
McIntosh, Keith
Cuevas, Andres
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Publisher
Institute of Physics Publishing
Abstract
We report on the formation of a lightly doped p-n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion
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Keywords: Capacitance voltage measurements; Crystalline silicons; Dopant segregation; Experimental evidence; Hot probe; Inversion layer; Metal oxide semiconductor structures; P-n junction; P-type; P-type silicon wafers; Thermal oxidation; Doping (additives); Oxidat
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Semiconductor Science and Technology
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Journal article
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2037-12-31
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