Structural and Optical properties of H implanted ZnO
dc.contributor.author | Chan, Keng | |
dc.contributor.author | Ye, Jiandong | |
dc.contributor.author | Parkinson, Patrick | |
dc.contributor.author | Monakhov, E V | |
dc.contributor.author | Johansen, K.M. | |
dc.contributor.author | Vines, Lasse | |
dc.contributor.author | Svensson, Bengt Gunnar | |
dc.contributor.author | Jagadish, Chennupati | |
dc.contributor.author | Wong-Leung, Jennifer | |
dc.coverage.spatial | Melbourne Australia | |
dc.date.accessioned | 2015-12-10T22:54:51Z | |
dc.date.created | December 12-14 2012 | |
dc.date.issued | 2012 | |
dc.date.updated | 2016-02-24T10:19:25Z | |
dc.description.abstract | ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO. | |
dc.identifier.isbn | 9781467330459 | |
dc.identifier.uri | http://hdl.handle.net/1885/59830 | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE Inc) | |
dc.relation.ispartofseries | Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) | |
dc.source | COMMAD 2012 Proceedings | |
dc.source.uri | http://commad2012.physics.unimelb.edu.au/ | |
dc.subject | Keywords: Implantation dose; Implanted region; N-type conductivity; Optical technique; Secondary ion mass spectroscopy; Structural and optical properties; UV photoluminescence; Wide-band-gap semiconductor; Microelectronics; Optical properties; Optoelectronic device | |
dc.title | Structural and Optical properties of H implanted ZnO | |
dc.type | Conference paper | |
local.bibliographicCitation.lastpage | 220 | |
local.bibliographicCitation.startpage | 219 | |
local.contributor.affiliation | Chan, Keng, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Ye, Jiandong, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Parkinson, Patrick, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Monakhov, E V, University of Oslo | |
local.contributor.affiliation | Johansen, K.M., University of Oslo | |
local.contributor.affiliation | Vines, Lasse, University of Oslo | |
local.contributor.affiliation | Svensson, Bengt Gunnar, University of Oslo | |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Wong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU | |
local.contributor.authoremail | u4260840@anu.edu.au | |
local.contributor.authoruid | Chan, Keng, u4260840 | |
local.contributor.authoruid | Ye, Jiandong, u4920827 | |
local.contributor.authoruid | Parkinson, Patrick, u4869537 | |
local.contributor.authoruid | Jagadish, Chennupati, u9212349 | |
local.contributor.authoruid | Wong-Leung, Yin-Yin (Jennifer), u9607716 | |
local.description.embargo | 2037-12-31 | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.absfor | 020406 - Surfaces and Structural Properties of Condensed Matter | |
local.identifier.absfor | 091203 - Compound Semiconductors | |
local.identifier.absseo | 970102 - Expanding Knowledge in the Physical Sciences | |
local.identifier.ariespublication | U3594520xPUB510 | |
local.identifier.doi | 10.1109/COMMAD.2012.6472439 | |
local.identifier.scopusID | 2-s2.0-84875597962 | |
local.identifier.uidSubmittedBy | U3594520 | |
local.type.status | Published Version |
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