Structural and Optical properties of H implanted ZnO

dc.contributor.authorChan, Keng
dc.contributor.authorYe, Jiandong
dc.contributor.authorParkinson, Patrick
dc.contributor.authorMonakhov, E V
dc.contributor.authorJohansen, K.M.
dc.contributor.authorVines, Lasse
dc.contributor.authorSvensson, Bengt Gunnar
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorWong-Leung, Jennifer
dc.coverage.spatialMelbourne Australia
dc.date.accessioned2015-12-10T22:54:51Z
dc.date.createdDecember 12-14 2012
dc.date.issued2012
dc.date.updated2016-02-24T10:19:25Z
dc.description.abstractZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO.
dc.identifier.isbn9781467330459
dc.identifier.urihttp://hdl.handle.net/1885/59830
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
dc.sourceCOMMAD 2012 Proceedings
dc.source.urihttp://commad2012.physics.unimelb.edu.au/
dc.subjectKeywords: Implantation dose; Implanted region; N-type conductivity; Optical technique; Secondary ion mass spectroscopy; Structural and optical properties; UV photoluminescence; Wide-band-gap semiconductor; Microelectronics; Optical properties; Optoelectronic device
dc.titleStructural and Optical properties of H implanted ZnO
dc.typeConference paper
local.bibliographicCitation.lastpage220
local.bibliographicCitation.startpage219
local.contributor.affiliationChan, Keng, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYe, Jiandong, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationParkinson, Patrick, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMonakhov, E V, University of Oslo
local.contributor.affiliationJohansen, K.M., University of Oslo
local.contributor.affiliationVines, Lasse, University of Oslo
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.authoremailu4260840@anu.edu.au
local.contributor.authoruidChan, Keng, u4260840
local.contributor.authoruidYe, Jiandong, u4920827
local.contributor.authoruidParkinson, Patrick, u4869537
local.contributor.authoruidJagadish, Chennupati, u9212349
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationU3594520xPUB510
local.identifier.doi10.1109/COMMAD.2012.6472439
local.identifier.scopusID2-s2.0-84875597962
local.identifier.uidSubmittedByU3594520
local.type.statusPublished Version

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