Structural and Optical properties of H implanted ZnO
Date
2012
Authors
Chan, Keng
Ye, Jiandong
Parkinson, Patrick
Monakhov, E V
Johansen, K.M.
Vines, Lasse
Svensson, Bengt Gunnar
Jagadish, Chennupati
Wong-Leung, Jennifer
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO.
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Keywords
Keywords: Implantation dose; Implanted region; N-type conductivity; Optical technique; Secondary ion mass spectroscopy; Structural and optical properties; UV photoluminescence; Wide-band-gap semiconductor; Microelectronics; Optical properties; Optoelectronic device
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Source
COMMAD 2012 Proceedings
Type
Conference paper
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2037-12-31
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