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Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells

Date

2000

Authors

Deenapanray, Prakash
Fu, Lan
Petravic, Mladen
Jagadish, Chennupati
Gong, Bin
Lamb, Robert Norman

Journal Title

Journal ISSN

Volume Title

Publisher

John Wiley & Sons Inc

Abstract

The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0.3Ga0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was c

Description

Keywords

Keywords: Anodic oxidation; Crystal defects; Deep level transient spectroscopy; Epitaxial growth; Interdiffusion (solids); Rapid thermal annealing; Semiconducting aluminum compounds; Semiconducting films; Semiconducting gallium arsenide; X ray photoelectron spectro

Citation

Source

Surface and Interface Analysis

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D

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