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Luminescence Study of Si and Ge Implanted (1-102) Sapphires

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dc.contributor.authorKim, S
dc.contributor.authorPark, C J
dc.contributor.authorCho, H Y
dc.contributor.authorChoi, Suk Ho
dc.contributor.authorElliman, Robert
dc.date.accessioned2015-12-08T22:23:51Z
dc.date.issued2004
dc.date.updated2015-12-08T08:55:32Z
dc.description.abstractImplantation with 30 keV Si - or Ge - and subsequent annealing at 1100°C create nanocrystalline Si or Ge (nc-Si or nc-Ge) in host materials such as (1̄102) sapphire and fused silica. Photoluminescence (PL) and cathodluminescence (CL) have been used to i
dc.identifier.issn0374-4884
dc.identifier.urihttp://hdl.handle.net/1885/33043
dc.publisherHanguk Mulli Hakhoe
dc.sourceJournal of the Korean Physical Society
dc.subjectKeywords: Cathodoluminescence; Defect; Ge Nanocrystals; Implantation; Photoluminescence; Sapphire; Si Nanocrystals
dc.titleLuminescence Study of Si and Ge Implanted (1-102) Sapphires
dc.typeJournal article
local.bibliographicCitation.lastpageS504
local.bibliographicCitation.startpageS501
local.contributor.affiliationKim, S, Dongguk University
local.contributor.affiliationPark, C J, Dongguk University
local.contributor.affiliationCho, H Y, Dongguk University
local.contributor.affiliationChoi, Suk Ho, Kyung Hee University
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidElliman, Robert, u9012877
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationU4047546xPUB98
local.identifier.citationvolume45
local.identifier.scopusID2-s2.0-12744271526
local.type.statusPublished Version

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