Luminescence Study of Si and Ge Implanted (1-102) Sapphires

Kim, S; Park, C J; Cho, H Y; Choi, Suk Ho; Elliman, Robert

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Luminescence Study of Si and Ge Implanted (1-102) Sapphires

Date

2004

Authors

Kim, S

Park, C J

Cho, H Y

Choi, Suk Ho

Elliman, Robert

Publisher

Hanguk Mulli Hakhoe

Abstract

Implantation with 30 keV Si - or Ge - and subsequent annealing at 1100°C create nanocrystalline Si or Ge (nc-Si or nc-Ge) in host materials such as (1̄102) sapphire and fused silica. Photoluminescence (PL) and cathodluminescence (CL) have been used to i

Keywords

Keywords: Cathodoluminescence; Defect; Ge Nanocrystals; Implantation; Photoluminescence; Sapphire; Si Nanocrystals

URI

http://hdl.handle.net/1885/33043

Collections

ANU Research Publications

Source

Journal of the Korean Physical Society

Type

Journal article

Restricted until

2037-12-31

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Luminescence Study of Si and Ge Implanted (1-102) Sapphires

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