Characterization of deep level traps responsible for isolation of proton implanted GaAs

Date

2003-03-15

Authors

Boudinov, H
Coelho, A V P
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250 °C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV.

Description

Keywords

gallium arsenide, III-V semiconductors, deep levels, deep level transient spectroscopy, thermal stability, defect states, proton effects, ion implantation, MOCVD coatings, annealing

Citation

Journal of Applied Physics 93.6 (2003): 3234-8

Source

Journal of Applied Physics

Type

Journal article

Book Title

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