Characterization of deep level traps responsible for isolation of proton implanted GaAs

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dc.contributor.authorBoudinov, Hen_AU
dc.contributor.authorCoelho, A V Pen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2010-09-22T01:57:36Zen_US
dc.date.accessioned2010-12-20T06:04:13Z
dc.date.available2010-09-22T01:57:36Zen_US
dc.date.available2010-12-20T06:04:13Z
dc.date.issued2003-03-15en_US
dc.date.updated2015-12-12T08:35:51Z
dc.description.abstractDeep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250 °C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV.
dc.format5 pages
dc.identifier.citationJournal of Applied Physics 93.6 (2003): 3234-8
dc.identifier.issn0021-8979en_US
dc.identifier.issn1089-7550en_US
dc.identifier.urihttp://hdl.handle.net/10440/1108en_US
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/10440/1108
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2003 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)
dc.sourceJournal of Applied Physics
dc.source.urihttp://link.aip.org/link/JAPIAU/v93/i6/p3234/s1en_US
dc.subjectgallium arsenide
dc.subjectIII-V semiconductors
dc.subjectdeep levels
dc.subjectdeep level transient spectroscopy
dc.subjectthermal stability
dc.subjectdefect states
dc.subjectproton effects
dc.subjection implantation
dc.subjectMOCVD coatings
dc.subjectannealing
dc.titleCharacterization of deep level traps responsible for isolation of proton implanted GaAs
dc.typeJournal article
dcterms.dateAccepted2002-12-19en_US
local.bibliographicCitation.issue6
local.bibliographicCitation.lastpage3238
local.bibliographicCitation.startpage3234
local.contributor.affiliationBoudinov, H, Instituto de Fisica
local.contributor.affiliationCoelho, A V P, Instituto de Fisica
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidE5981en_US
local.contributor.authoruidE7132en_US
local.contributor.authoruidU9302338en_US
local.contributor.authoruidU9212349en_US
local.description.refereedYes
local.identifier.absfor091207en_US
local.identifier.ariespublicationMigratedxPub17967en_US
local.identifier.citationvolume93
local.identifier.doi10.1063/1.1554761
local.identifier.scopusID2-s2.0-0037444842
local.identifier.uidSubmittedByu8103816en_US
local.publisher.urlhttp://www.aip.org/en_US
local.type.statusPublished Versionen_US

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