Strong photosensitivity in tin-doped silica films
Date
2000
Authors
Gaff, K
Mariman, Elaine
Dall (previously Weijers), Tessica
Love, John
Boswell, Roderick
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol% SnO2 were exposed to 2kJ/cm2 of 248 nm UV radiation. Negative refractive index changes as large as -2.7 × 10-3 were observed on irradiation.
Description
Keywords
Keywords: Evaporation; Excimer lasers; Low temperature operations; Optical fibers; Photosensitivity; Refractive index; Semiconductor doping; Silica; Systematic errors; Tin; Ultraviolet radiation; Helicon activated reactive evaporation; Negative index refractive; Ti
Citation
Collections
Source
Electronics Letters
Type
Journal article