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Anelastic behavior in GaAs semiconductor nanowires

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dc.contributor.authorChen, Binen_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorWang, Yan-Boen_AU
dc.contributor.authorLiao, Xiao-Zhouen_AU
dc.contributor.authorMai, Yiu-Wingen_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorRinger, Simon P.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-13T22:25:34Z
dc.date.issued2013
dc.date.updated2016-02-24T09:14:46Z
dc.description.abstractThe mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelas
dc.identifier.issn1530-6984
dc.identifier.urihttp://hdl.handle.net/1885/73321
dc.publisherAmerican Chemical Society
dc.sourceNano Letters
dc.subjectKeywords: Anelastic behavior; Anelasticity; Crystalline defects; Gaas nanowires; Gaas semiconductors; Mechanical behavior; Situ deformation; Vertically aligned; Crystalline materials; Deformation; Gallium arsenide; Semiconducting gallium; Transmission electron micr Anelasticity; crystalline defects; GaAs nanowires; in situ deformation; transmission electron microscopy
dc.titleAnelastic behavior in GaAs semiconductor nanowires
dc.typeJournal article
local.bibliographicCitation.issue7
local.bibliographicCitation.lastpage3172
local.bibliographicCitation.startpage3169
local.contributor.affiliationChen, Bin, University of Sydney
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWang, Yan-Bo, University of Sydney
local.contributor.affiliationLiao, Xiao-Zhou, University of Sydney
local.contributor.affiliationMai, Yiu-Wing, University of Sydney
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRinger, Simon P., University of Sydney
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationf5625xPUB3644
local.identifier.citationvolume13
local.identifier.doi10.1021/nl401175t
local.identifier.scopusID2-s2.0-84880149883
local.identifier.thomsonID000321884300027
local.type.statusPublished Version

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