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Anelastic behavior in GaAs semiconductor nanowires

Date

Authors

Chen, Bin

Gao, Qiang

Wang, Yan-Bo

Liao, Xiao-Zhou

Mai, Yiu-Wing

Zou, Jin

Jagadish, Chennupati

Ringer, Simon P.

Tan, Hark Hoe

Publisher

American Chemical Society

Abstract

The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelas

Keywords

Keywords: Anelastic behavior; Anelasticity; Crystalline defects; Gaas nanowires; Gaas semiconductors; Mechanical behavior; Situ deformation; Vertically aligned; Crystalline materials; Deformation; Gallium arsenide; Semiconducting gallium; Transmission electron micr Anelasticity; crystalline defects; GaAs nanowires; in situ deformation; transmission electron microscopy

URI

http://hdl.handle.net/1885/73321

Collections

ANU Research Publications

Source

Nano Letters

Type

Journal article

DOI

10.1021/nl401175t

Restricted until

2037-12-31

Downloads

File

Description

01_Chen_Anelastic_behavior_in_GaAs_2013.pdf (3.29 MB)