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High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

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Date

2014

Authors

Mokkapati, Sudha
Jiang, Nian
Saxena, Dhruv
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/53324

Collections

ANU Research Publications

Source

Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/SUM.2014.14

Restricted until

2037-12-31

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Description
01_Mokkapati_High_quantum_efficiency_(Al)_2014.pdf (1.04 MB)

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