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Impurity Gettering by Cavities in Si Investigated with the PAC Technique

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dc.contributor.authorBartels, J
dc.contributor.authorVianden, R
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T23:22:48Z
dc.date.issued2002
dc.date.updated2015-12-12T09:12:40Z
dc.description.abstractLayers of cavities in silicon produced by He implantation are a promising tool to prevent residual impurities, mainly transition metal atoms, to interact with implanted dopant atoms. The γ-γ perturbed angular correlation (PAC) technique is well suited t
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/91625
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Crystal impurities; Heat treatment; Semiconducting silicon; Semiconductor doping; Transition metals; Perturbed angular correlation (PAC); Nuclear physics Cavities; Perturbed angular correlation; Trapping
dc.titleImpurity Gettering by Cavities in Si Investigated with the PAC Technique
dc.typeJournal article
local.bibliographicCitation.lastpage850
local.bibliographicCitation.startpage846
local.contributor.affiliationBartels, J, University of Bonn
local.contributor.affiliationVianden, R, Helmholtz Institute for Radiation and Nuclear Physics
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub22434
local.identifier.citationvolume190
local.identifier.doi10.1016/S0168-583X(01)01220-4
local.identifier.scopusID2-s2.0-0036568969
local.type.statusPublished Version

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