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Impurity Gettering by Cavities in Si Investigated with the PAC Technique

Date

Authors

Bartels, J

Vianden, R

Ridgway, Mark C

Publisher

Elsevier

Abstract

Layers of cavities in silicon produced by He implantation are a promising tool to prevent residual impurities, mainly transition metal atoms, to interact with implanted dopant atoms. The γ-γ perturbed angular correlation (PAC) technique is well suited t

Keywords

Keywords: Crystal impurities; Heat treatment; Semiconducting silicon; Semiconductor doping; Transition metals; Perturbed angular correlation (PAC); Nuclear physics Cavities; Perturbed angular correlation; Trapping

URI

http://hdl.handle.net/1885/91625

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/S0168-583X(01)01220-4

Restricted until

2037-12-31

Downloads

File

Description

01_Bartels_Impurity_Gettering_by_Cavities_2002.pdf (121.17 KB)