Impurity Gettering by Cavities in Si Investigated with the PAC Technique
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Bartels, J
Vianden, R
Ridgway, Mark C
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Elsevier
Abstract
Layers of cavities in silicon produced by He implantation are a promising tool to prevent residual impurities, mainly transition metal atoms, to interact with implanted dopant atoms. The γ-γ perturbed angular correlation (PAC) technique is well suited t
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Nuclear Instruments and Methods in Physics Research: Section B
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2037-12-31