General Semiconductor Junction Relations
| dc.contributor.author | Fletcher, Neville H. | |
| dc.date.accessioned | 2020-10-15T02:38:50Z | |
| dc.date.issued | 1957 | |
| dc.description.abstract | General carrier density relations are derived for the case of an abrupt junction between two sections of semiconductor with arbitrary impurity contents and with an arbitrary applied bias. These relations reduce to those of Shockley at very low bias Levels, but in addition take account of all types of conductivity modulation effects. | en_AU |
| dc.format.mimetype | application/pdf | en_AU |
| dc.identifier.issn | 0368-1947 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/212511 | |
| dc.language.iso | en_AU | en_AU |
| dc.publisher | Taylor & Francis | en_AU |
| dc.rights | © 1957 Taylor & Francis | en_AU |
| dc.source | Journal of Electronics and Control | en_AU |
| dc.title | General Semiconductor Junction Relations | en_AU |
| dc.type | Journal article | en_AU |
| local.bibliographicCitation.issue | 6 | en_AU |
| local.bibliographicCitation.lastpage | 610 | en_AU |
| local.bibliographicCitation.startpage | 609 | en_AU |
| local.contributor.affiliation | Fletcher, N. H., Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.authoremail | neville.fletcher@anu.edu.au | en_AU |
| local.contributor.authoruid | u1849746 | en_AU |
| local.description.embargo | 2037-12-31 | |
| local.description.notes | The author was affiliated with University of New England when the paper was published | en_AU |
| local.identifier.citationvolume | 2 | en_AU |
| local.identifier.doi | 10.1080/00207215708937064 | en_AU |
| local.identifier.uidSubmittedBy | u1005913 | en_AU |
| local.publisher.url | https://www.routledge.com/ | en_AU |
| local.type.status | Published Version | en_AU |