General Semiconductor Junction Relations

Fletcher, Neville H.

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General Semiconductor Junction Relations

Date

1957

Authors

Fletcher, Neville H.

Publisher

Taylor & Francis

Abstract

General carrier density relations are derived for the case of an abrupt junction between two sections of semiconductor with arbitrary impurity contents and with an arbitrary applied bias. These relations reduce to those of Shockley at very low bias Levels, but in addition take account of all types of conductivity modulation effects.

URI

http://hdl.handle.net/1885/212511

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ANU Research Publications

Source

Journal of Electronics and Control

Type

Journal article

DOI

10.1080/00207215708937064

Restricted until

2037-12-31

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General Semiconductor Junction Relations

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