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Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

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dc.contributor.authorChen, Yimin
dc.contributor.authorWang, Guoxiang
dc.contributor.authorShen, Xiang
dc.contributor.authorXu, Tiefeng
dc.contributor.authorWang, Rongping
dc.contributor.authorWu, Liangcai
dc.contributor.authorLu, Yegang
dc.contributor.authorLi, Junjian
dc.contributor.authorDai, Shixun
dc.contributor.authorNie, Qiuhua
dc.date.accessioned2015-12-10T23:31:38Z
dc.date.issued2014
dc.date.updated2015-12-10T11:15:37Z
dc.description.abstractZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).
dc.identifier.issn1466-8033
dc.identifier.urihttp://hdl.handle.net/1885/68726
dc.publisherRoyal Society of Chemistry
dc.sourceCrystEngComm
dc.titleCrystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications
dc.typeJournal article
local.bibliographicCitation.issue5
local.bibliographicCitation.lastpage762
local.bibliographicCitation.startpage757
local.contributor.affiliationChen, Yimin, Ningbo University
local.contributor.affiliationWang, Guoxiang, Ningbo University
local.contributor.affiliationShen, Xiang, Ningbo University
local.contributor.affiliationXu, Tiefeng, Ningbo University
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWu, Liangcai, Chinese Academy of Sciences
local.contributor.affiliationLu, Yegang, Ningbo University
local.contributor.affiliationLi, Junjian, Ningbo University
local.contributor.affiliationDai, Shixun, Ningbo University
local.contributor.affiliationNie, Qiuhua, Ningbo University
local.contributor.authoruidWang, Rongping, u4219061
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor030600 - PHYSICAL CHEMISTRY (INCL. STRUCTURAL)
local.identifier.ariespublicationU3488905xPUB1809
local.identifier.citationvolume16
local.identifier.doi10.1039/c3ce42024h
local.identifier.scopusID2-s2.0-84891459953
local.identifier.thomsonID000328952000003
local.type.statusPublished Version

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