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Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

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Date

2014

Authors

Chen, Yimin
Wang, Guoxiang
Shen, Xiang
Xu, Tiefeng
Wang, Rongping
Wu, Liangcai
Lu, Yegang
Li, Junjian
Dai, Shixun
Nie, Qiuhua

Journal Title

Journal ISSN

Volume Title

Publisher

Royal Society of Chemistry

Abstract

ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

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Keywords

Citation

URI

http://hdl.handle.net/1885/68726

Collections

ANU Research Publications

Source

CrystEngComm

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1039/c3ce42024h

Restricted until

2037-12-31

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01_Chen_Crystallization_behaviors_of_2014.pdf (2.83 MB)

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