Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescence

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dc.contributor.authorWang, Hao
dc.contributor.authorYuan, Jiayue
dc.contributor.authorvan Veldhoven, Rene P J
dc.contributor.authorNotzel, Richard
dc.date.accessioned2015-12-08T22:22:53Z
dc.date.issued2011
dc.date.updated2016-06-14T08:59:07Z
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/1885/32652
dc.publisherElsevier
dc.sourceJournal of Crystal Growth
dc.subjectKeywords: Cap layer thickness; Cap layers; Defect diffusion; Efficiency increase; High temperature; InAs quantum dots; InP; Low temperatures; Low-temperature InP; Metal-organic vapor phase epitaxy; Optical qualities; Peak wavelength; Quantum Dot; Red shift; Semi co A3. Metalorganic vapor-phase epitaxy; A3. Quantum dot; B2. Semiconducting IIIV materials
dc.titleEffect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescence
dc.typeJournal article
local.bibliographicCitation.issue2011
local.bibliographicCitation.lastpage571
local.bibliographicCitation.startpage570
local.contributor.affiliationWang, Hao, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYuan, Jiayue, Eindhoven University of Technology
local.contributor.affiliationvan Veldhoven, Rene P J, Eindhoven University of Technology
local.contributor.affiliationNotzel, Richard, Eindhoven University of Technology
local.contributor.authoruidWang, Hao, u4953384
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu4153526xPUB94
local.identifier.citationvolume318
local.identifier.doi10.1016/j.jcrysgro.2010.08.048
local.identifier.scopusID2-s2.0-79952737603
local.type.statusPublished Version

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