Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescence

Date

2011

Authors

Wang, Hao
Yuan, Jiayue
van Veldhoven, Rene P J
Notzel, Richard

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Description

Keywords

Keywords: Cap layer thickness; Cap layers; Defect diffusion; Efficiency increase; High temperature; InAs quantum dots; InP; Low temperatures; Low-temperature InP; Metal-organic vapor phase epitaxy; Optical qualities; Peak wavelength; Quantum Dot; Red shift; Semi co A3. Metalorganic vapor-phase epitaxy; A3. Quantum dot; B2. Semiconducting IIIV materials

Citation

Source

Journal of Crystal Growth

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.jcrysgro.2010.08.048

Restricted until

2037-12-31