Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescence

Date

Authors

Wang, Hao

Yuan, Jiayue

van Veldhoven, Rene P J

Notzel, Richard

Publisher

Elsevier

Keywords

Keywords: Cap layer thickness; Cap layers; Defect diffusion; Efficiency increase; High temperature; InAs quantum dots; InP; Low temperatures; Low-temperature InP; Metal-organic vapor phase epitaxy; Optical qualities; Peak wavelength; Quantum Dot; Red shift; Semi co A3. Metalorganic vapor-phase epitaxy; A3. Quantum dot; B2. Semiconducting IIIV materials

URI

http://hdl.handle.net/1885/32652

Collections

ANU Research Publications

Source

Journal of Crystal Growth

Type

Journal article

DOI

10.1016/j.jcrysgro.2010.08.048

Restricted until

2037-12-31

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File

Description

01_Wang_Effect_of_low-temperature_InP_2011.pdf (231.63 KB)