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Formation and characterization of Ta 2 O 5 /TaO x films formed by O ion implantation

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dc.contributor.authorRuffell, S.
dc.contributor.authorKurunczi, P.
dc.contributor.authorEngland, J.
dc.contributor.authorErokhin, Y.
dc.contributor.authorHautala, J.
dc.contributor.authorElliman, Robert
dc.date.accessioned2015-12-13T22:30:50Z
dc.date.issued2013
dc.date.updated2016-02-24T09:25:21Z
dc.description.abstractTa2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/75017
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Capacitance voltage measurements; Cross-sectional transmission electron microscopy; Electrical measurement; High volume manufacturing; Implantation energies; Non-volatile memory; Resistive switching; Resistive switching memory; Ion implantation; Photoelec Ion-implantation; Nonvolatile memory; Resistive switching; Tantalum oxide
dc.titleFormation and characterization of Ta 2 O 5 /TaO x films formed by O ion implantation
dc.typeJournal article
local.bibliographicCitation.lastpage494
local.bibliographicCitation.startpage491
local.contributor.affiliationRuffell, S., Applied Materials Inc
local.contributor.affiliationKurunczi, P., Varian Semiconductor Equipment
local.contributor.affiliationEngland, J., Varian Semiconductor Equipment
local.contributor.affiliationErokhin, Y., Applied Materials Inc
local.contributor.affiliationHautala, J., Applied Materials Inc
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidElliman, Robert, u9012877
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor091205 - Functional Materials
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.absseo970109 - Expanding Knowledge in Engineering
local.identifier.absseo970110 - Expanding Knowledge in Technology
local.identifier.ariespublicationf5625xPUB4426
local.identifier.citationvolume307
local.identifier.doi10.1016/j.nimb.2012.11.092
local.identifier.scopusID2-s2.0-84885172387
local.identifier.thomsonID000321722200109
local.type.statusPublished Version

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