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Formation and characterization of Ta 2 O 5 /TaO x films formed by O ion implantation

Date

Authors

Ruffell, S.

Kurunczi, P.

England, J.

Erokhin, Y.

Hautala, J.

Elliman, Robert

Publisher

Elsevier

Abstract

Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron

Keywords

Keywords: Capacitance voltage measurements; Cross-sectional transmission electron microscopy; Electrical measurement; High volume manufacturing; Implantation energies; Non-volatile memory; Resistive switching; Resistive switching memory; Ion implantation; Photoelec Ion-implantation; Nonvolatile memory; Resistive switching; Tantalum oxide

URI

http://hdl.handle.net/1885/75017

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2012.11.092

Restricted until

2037-12-31

Downloads

File

Description

01_Ruffell_Formation_and_characterization_2013.pdf (1.24 MB)

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