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On the surface passivation of textured C-Si by PECVD silicon nitride

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dc.contributor.authorWan, Yimao
dc.contributor.authorMcIntosh, Keith
dc.date.accessioned2015-12-13T22:30:33Z
dc.date.issued2013
dc.date.updated2016-02-24T09:24:27Z
dc.description.abstractWe investigate the surface passivation of crystalline silicon (c-Si) wafers that are textured with random upright pyramids and passivated with amorphous silicon nitride (SiNx ). Over a large range of refractive indices (n = 1.89-4.1 at 632 nm), we achieve
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/74892
dc.publisherIEEE Electron Devices Society
dc.sourceIEEE Journal of Photovoltaics
dc.subjectKeywords: Crystalline silicons; PECVD silicon nitride; Planar surface; Pyramidal textures; Surface passivation; Surface recombination velocities; Surface recombinations; Textured surface; Passivation; Refractive index; Silicon; Silicon wafers; Surfaces; Textures; S Silicon nitride; surface passivation; surface recombination; texture
dc.titleOn the surface passivation of textured C-Si by PECVD silicon nitride
dc.typeJournal article
local.bibliographicCitation.issue4
local.bibliographicCitation.lastpage1235
local.bibliographicCitation.startpage1229
local.contributor.affiliationWan, Yimao, College of Engineering and Computer Science, ANU
local.contributor.affiliationMcIntosh, Keith, PV Lighthouse
local.contributor.authoruidWan, Yimao, u4793143
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationf5625xPUB4360
local.identifier.citationvolume3
local.identifier.doi10.1109/JPHOTOV.2013.2271832
local.identifier.scopusID2-s2.0-84884619231
local.identifier.thomsonID000324881400015
local.type.statusPublished Version

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