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On the surface passivation of textured C-Si by PECVD silicon nitride

Date

Authors

Wan, Yimao

McIntosh, Keith

Publisher

IEEE Electron Devices Society

Abstract

We investigate the surface passivation of crystalline silicon (c-Si) wafers that are textured with random upright pyramids and passivated with amorphous silicon nitride (SiNx ). Over a large range of refractive indices (n = 1.89-4.1 at 632 nm), we achieve

Keywords

Keywords: Crystalline silicons; PECVD silicon nitride; Planar surface; Pyramidal textures; Surface passivation; Surface recombination velocities; Surface recombinations; Textured surface; Passivation; Refractive index; Silicon; Silicon wafers; Surfaces; Textures; S Silicon nitride; surface passivation; surface recombination; texture

URI

http://hdl.handle.net/1885/74892

Collections

ANU Research Publications

Source

IEEE Journal of Photovoltaics

Type

Journal article

DOI

10.1109/JPHOTOV.2013.2271832

Restricted until

2037-12-31

Downloads

File

Description

01_Wan_On_the_surface_passivation_of_2013.pdf (551.18 KB)