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Determination of thickness and composition of high-k dielectrics using high-energy electrons

Date

Authors

Grande, Pedro

Vos, Maarten

Venkatachalam, Dinesh

Nandi, Sanjoy

Elliman, Robert

Publisher

American Institute of Physics (AIP)

Abstract

We demonstrate the application of high-energy elastic electron backscattering to the analysis of thin (2-20 nm) HfO2 overlayers on oxidized Si substrates. The film composition and thickness are determined directly from elastic scattering peaks characteris

Keywords

Keywords: Elastic electron backscattering; Film composition; High spatial resolution; High-energy electron; High-k dielectric; Medium energy; Rutherford back-scattering spectrometry; Thin film analysis; Hafnium oxides; Rutherford backscattering spectroscopy; Scanni

URI

http://hdl.handle.net/1885/60696

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Access Statement

Open Access

DOI

10.1063/1.4818637

Downloads

File

Description

01_Grande_Determination_of_thickness_and_2013.pdf (1.22 MB)

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