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Effect of low Ge content on B diffusion in amorphous SiGe alloys

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dc.contributor.authorEdelman, L A
dc.contributor.authorElliman, Robert
dc.contributor.authorRubin, L
dc.contributor.authorWashington, L
dc.contributor.authorJones, K S
dc.date.accessioned2015-12-08T22:27:01Z
dc.date.available2015-12-08T22:27:01Z
dc.date.issued2008
dc.date.updated2015-12-08T09:16:34Z
dc.description.abstractDiffusion of B in amorphous Si is known to be four orders of magnitude higher than in crystalline Si. The effect of Ge at low concentrations on B diffusion in the amorphous phase is unknown. 1.5 μm thick relaxed layers of varying SiGe alloys (0, 6, 12, a
dc.identifier.issn1071-1023
dc.identifier.urihttp://hdl.handle.net/1885/33890
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceJournal of Vacuum Science and Technology B
dc.subjectKeywords: Orders of magnitude; Preexponential factors; Solid phase epitaxial regrowth; Strain-relaxed crystalline; Amorphous alloys; Crystalline materials; Diffusion; Epitaxial growth; Recrystallization (metallurgy); Secondary ion mass spectrometry; Germanium compo
dc.titleEffect of low Ge content on B diffusion in amorphous SiGe alloys
dc.typeJournal article
local.bibliographicCitation.issue1
local.bibliographicCitation.lastpage337
local.bibliographicCitation.startpage333
local.contributor.affiliationEdelman, L A, University of Florida
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRubin, L, Axcelis Technologies
local.contributor.affiliationWashington, L, Sunnyvale
local.contributor.affiliationJones, K S , University of Florida
local.contributor.authoruidElliman, Robert, u9012877
local.description.notesImported from ARIES
local.identifier.absfor091207 - Metals and Alloy Materials
local.identifier.ariespublicationu3488905xPUB107
local.identifier.citationvolume26
local.identifier.doi10.1116/1.2781511
local.identifier.scopusID2-s2.0-38849198038
local.identifier.thomsonID000253399000064
local.type.statusPublished Version

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