Effect of low Ge content on B diffusion in amorphous SiGe alloys

Edelman, L A; Elliman, Robert; Rubin, L; Washington, L; Jones, K S

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Effect of low Ge content on B diffusion in amorphous SiGe alloys

Date

2008

Authors

Edelman, L A

Elliman, Robert

Rubin, L

Washington, L

Jones, K S

Publisher

American Institute of Physics (AIP)

Abstract

Diffusion of B in amorphous Si is known to be four orders of magnitude higher than in crystalline Si. The effect of Ge at low concentrations on B diffusion in the amorphous phase is unknown. 1.5 μm thick relaxed layers of varying SiGe alloys (0, 6, 12, a