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The Kinetics of Dopant-Enhanced Solid Phase Epitaxy in H-Free Amorphous Silicon Layers

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dc.contributor.authorMcCallum, J.
dc.date.accessioned2015-12-13T23:34:14Z
dc.date.available2015-12-13T23:34:14Z
dc.date.issued1999
dc.date.updated2015-12-12T09:35:18Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/93384
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.titleThe Kinetics of Dopant-Enhanced Solid Phase Epitaxy in H-Free Amorphous Silicon Layers
dc.typeJournal article
local.bibliographicCitation.lastpage354
local.bibliographicCitation.startpage350
local.contributor.affiliationMcCallum, J, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidMcCallum, J, u9902178
local.description.embargo2099-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020405 - Soft Condensed Matter
local.identifier.ariespublicationMigratedxPub24724
local.identifier.citationvolumeB148
local.identifier.doi10.1016/S0168-583X(98)00671-5
local.type.statusPublished Version

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