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Novel crack propagation in PECVD-deposited dielectric thin films

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dc.contributor.authorElliman, Robert
dc.contributor.authorDall (previously Weijers), Tessica
dc.contributor.authorSpooner, M G
dc.contributor.authorKim, Tae-Hyun
dc.contributor.authorWilkinson, Andrew
dc.contributor.authorHuth, S
dc.contributor.authorTobias, V
dc.date.accessioned2015-12-07T22:42:43Z
dc.date.issued2007
dc.date.updated2015-12-07T11:11:03Z
dc.description.abstractSilicon-rich silicon oxide (SRSO) films, deposited onto (1 0 0) silicon substrates by plasma-enhanced chemical vapor deposition (PECVD), are shown to develop large tensile stresses during annealing in the temperature range 350-650 °C, a process that has
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/24662
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Crack propagation; Plasma enhanced chemical vapor deposition; Silicon; Tensile stress; Linear cracks; Silicon substrate; Silicon-rich silicon oxide (SRSO) films; Underlying silicon; Dielectric films Crack; Hydrogen; Ion-implantation; PECVD; Stress; Thin film
dc.titleNovel crack propagation in PECVD-deposited dielectric thin films
dc.typeJournal article
local.bibliographicCitation.lastpage557
local.bibliographicCitation.startpage554
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDall (previously Weijers), Tessica, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSpooner, M G, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Tae-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilkinson, Andrew, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationHuth, S, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTobias, V, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidElliman, Robert, u9012877
local.contributor.authoruidDall (previously Weijers), Tessica, u9905670
local.contributor.authoruidSpooner, M G, u3384536
local.contributor.authoruidKim, Tae-Hyun, u3924901
local.contributor.authoruidWilkinson, Andrew, u4004166
local.contributor.authoruidHuth, S, t947
local.contributor.authoruidTobias, V, t948
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.ariespublicationu8709800xPUB33
local.identifier.citationvolume257
local.identifier.doi10.1016/j.nimb.2007.01.039
local.identifier.scopusID2-s2.0-33947641974
local.type.statusPublished Version

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