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Novel crack propagation in PECVD-deposited dielectric thin films

Date

Authors

Elliman, Robert

Dall (previously Weijers), Tessica

Spooner, M G

Kim, Tae-Hyun

Wilkinson, Andrew

Huth, S

Tobias, V

Publisher

Elsevier

Abstract

Silicon-rich silicon oxide (SRSO) films, deposited onto (1 0 0) silicon substrates by plasma-enhanced chemical vapor deposition (PECVD), are shown to develop large tensile stresses during annealing in the temperature range 350-650 °C, a process that has

Keywords

Keywords: Crack propagation; Plasma enhanced chemical vapor deposition; Silicon; Tensile stress; Linear cracks; Silicon substrate; Silicon-rich silicon oxide (SRSO) films; Underlying silicon; Dielectric films Crack; Hydrogen; Ion-implantation; PECVD; Stress; Thin film

URI

http://hdl.handle.net/1885/24662

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2007.01.039

Restricted until

2037-12-31

Downloads

File

Description

01_Elliman_Novel_crack_propagation_in_2007.pdf (478.01 KB)