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Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy

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dc.contributor.authorLever McGowan, Penelopeen_AU
dc.contributor.authorLowrie-Nunes, Zoen_AU
dc.contributor.authorBuda, Manuelaen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialBrisbane Australia
dc.date.accessioned2015-12-10T22:24:12Z
dc.date.available2015-12-10T22:24:12Z
dc.date.createdDecember 8 2004
dc.date.issued2005
dc.date.updated2015-12-09T09:15:02Z
dc.description.abstractA major problem facing quantum dot lasers is gain saturation. This is caused by low gain volume and also a low wavefunction overlap within the quantum dots. One method to increase the gain volume is to increase the number of layers of quantum dots. This paper compares the characteristics of lasers with three and five layers of quantum dots. It is shown that five layer devices can be made with improved efficiency and wavelength characteristics without a significant increase in the losses.
dc.identifier.isbn1097-2137
dc.identifier.urihttp://hdl.handle.net/1885/53148
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004)
dc.source2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
dc.subjectKeywords: Crystal growth; Epitaxial growth; Lasers; Metals; Molecular beam epitaxy; Optical waveguides; Quantum electronics; Threshold current density; (140.3500) lasers; characterisation; Gain saturation; InGaAs/GaAs; Metal organic (MO); Microelectronic materials; InGaAs; Quantum dots; Semiconductor lasers
dc.titleCharacterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy
dc.typeConference paper
local.bibliographicCitation.lastpage279
local.bibliographicCitation.startpage277
local.contributor.affiliationLever McGowan, Penelope, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLowrie-Nunes, Zo, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBuda, Manuela, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidLever McGowan, Penelope, u9915543
local.contributor.authoruidLowrie-Nunes, Zo, u3300201
local.contributor.authoruidBuda, Manuela, u4012377
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.absfor020604 - Quantum Optics
local.identifier.ariespublicationMigratedxPub266
local.identifier.doi10.1109/COMMAD.2004.1577544
local.identifier.scopusID2-s2.0-46149116568
local.type.statusPublished Version

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