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Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy

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Date

2005

Authors

Lever McGowan, Penelope
Lowrie-Nunes, Zo
Buda, Manuela
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

A major problem facing quantum dot lasers is gain saturation. This is caused by low gain volume and also a low wavefunction overlap within the quantum dots. One method to increase the gain volume is to increase the number of layers of quantum dots. This paper compares the characteristics of lasers with three and five layers of quantum dots. It is shown that five layer devices can be made with improved efficiency and wavelength characteristics without a significant increase in the losses.

Description

Keywords

Keywords: Crystal growth; Epitaxial growth; Lasers; Metals; Molecular beam epitaxy; Optical waveguides; Quantum electronics; Threshold current density; (140.3500) lasers; characterisation; Gain saturation; InGaAs/GaAs; Metal organic (MO); Microelectronic materials; InGaAs; Quantum dots; Semiconductor lasers

Citation

URI

http://hdl.handle.net/1885/53148

Collections

ANU Research Publications

Source

2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2004.1577544

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