Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

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dc.contributor.authorParkinson, Patrick
dc.contributor.authorDodson, Christopher
dc.contributor.authorJoyce, Hannah J
dc.contributor.authorBertness, Kris A.
dc.contributor.authorSanford, Norman A.
dc.contributor.authorHerz, Laura
dc.contributor.authorJohnston, Michael B
dc.date.accessioned2015-12-10T23:22:59Z
dc.date.issued2012
dc.date.updated2016-02-24T08:45:16Z
dc.description.abstractThe first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
dc.identifier.issn1530-6984
dc.identifier.urihttp://hdl.handle.net/1885/66757
dc.publisherAmerican Chemical Society
dc.sourceNano Letters
dc.subjectKeywords: Bulk materials; Catalyst-free; Crystalline structure; Gallium nitride nanowires; GaN; GaN nanowires; High mobility; Non-contact; Noncontact measurements; Surface plasmons; Surface trap; Tera Hertz; Gallium nitride; Molecular beam epitaxy; Photoconductivit GaN; nanowire; photoconductivity; surface plasmon; terahertz
dc.titleNoncontact measurement of charge carrier lifetime and mobility in GaN nanowires
dc.typeJournal article
local.bibliographicCitation.issue9
local.bibliographicCitation.lastpage4604
local.bibliographicCitation.startpage4600
local.contributor.affiliationParkinson, Patrick, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDodson, Christopher, National Institute of Standards and Technology
local.contributor.affiliationJoyce, Hannah J, University of Oxford
local.contributor.affiliationBertness, Kris A., National Institute of Standards and Technology
local.contributor.affiliationSanford, Norman A., National Institute of Standards and Technology
local.contributor.affiliationHerz, Laura, University of Oxford
local.contributor.affiliationJohnston, Michael B, University of Oxford
local.contributor.authoremailrepository.admin@anu.edu.au
local.contributor.authoruidParkinson, Patrick, u4869537
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationf5625xPUB1339
local.identifier.citationvolume12
local.identifier.doi10.1021/nl301898m
local.identifier.scopusID2-s2.0-84866322120
local.identifier.thomsonID000303321800006
local.identifier.uidSubmittedByf5625
local.type.statusPublished Version

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