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Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

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Date

2012

Authors

Parkinson, Patrick
Dodson, Christopher
Joyce, Hannah J
Bertness, Kris A.
Sanford, Norman A.
Herz, Laura
Johnston, Michael B

Journal Title

Journal ISSN

Volume Title

Publisher

American Chemical Society

Abstract

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

Description

Keywords

Keywords: Bulk materials; Catalyst-free; Crystalline structure; Gallium nitride nanowires; GaN; GaN nanowires; High mobility; Non-contact; Noncontact measurements; Surface plasmons; Surface trap; Tera Hertz; Gallium nitride; Molecular beam epitaxy; Photoconductivit GaN; nanowire; photoconductivity; surface plasmon; terahertz

Citation

URI

http://hdl.handle.net/1885/66757

Collections

ANU Research Publications

Source

Nano Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1021/nl301898m

Restricted until

2037-12-31

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01_Parkinson_Noncontact_measurement_of_2012.pdf (1.5 MB)

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