Structural Modifications in Amorphous Ge Produced by Ion Implantation

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dc.contributor.authorDesnica-Frankovic, I D
dc.contributor.authorFuric, K
dc.contributor.authorDesnica, U V
dc.contributor.authorRidgway, Mark C
dc.contributor.authorGlover, Christopher
dc.date.accessioned2015-12-10T23:30:50Z
dc.date.issued2001
dc.date.updated2015-12-10T11:09:45Z
dc.description.abstractRaman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with 3 × 1012 to 3 × 1016 cm-274Ge ions, at either room temperature (RT) or liquid nitrogen (LN) temperature. In all implanted samples, beyond the amorphizat
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/68353
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Absorption spectroscopy; Amorphous materials; Ion implantation; Raman spectroscopy; Thermal effects; Amorphization threshold; Amorphous germanium; Extended X ray absorption fine structure spectroscopy (EXAFS); Monocrystalline materials; Semiconducting ger Amorphous Ge; Disorder; EXAFS; Ion implantation; Raman spectroscopy
dc.titleStructural Modifications in Amorphous Ge Produced by Ion Implantation
dc.typeJournal article
local.bibliographicCitation.lastpage195
local.bibliographicCitation.startpage192
local.contributor.affiliationDesnica-Frankovic, I D, Rudjer Boskovic Institute
local.contributor.affiliationFuric, K, Rudjer Boskovic Institute
local.contributor.affiliationDesnica, U V, Rudjer Boskovic Institute
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGlover, Christopher, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidRidgway, Mark C, u9001886
local.contributor.authoruidGlover, Christopher, u3915129
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub1689
local.identifier.citationvolume178
local.identifier.doi10.1016/S0168-583X(00)00489-4
local.identifier.scopusID2-s2.0-0035333168
local.type.statusPublished Version

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