Structural Modifications in Amorphous Ge Produced by Ion Implantation
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Desnica-Frankovic, I D
Furic, K
Desnica, U V
Ridgway, Mark C
Glover, Christopher
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Elsevier
Abstract
Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with 3 × 1012 to 3 × 1016 cm-274Ge ions, at either room temperature (RT) or liquid nitrogen (LN) temperature. In all implanted samples, beyond the amorphizat
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Nuclear Instruments and Methods in Physics Research: Section B
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2037-12-31