Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties

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dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorSun, B Qen_AU
dc.contributor.authorGal, Michaelen_AU
dc.contributor.authorOuyang, Len_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-13T23:05:14Z
dc.date.available2015-12-13T23:05:14Z
dc.date.issued2004
dc.date.updated2015-12-12T07:59:20Z
dc.description.abstractIn this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states.
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/1885/85431
dc.publisherElsevier
dc.sourceJournal of Crystal Growth
dc.subjectKeywords: Charge coupled devices; Computer simulation; Crystal defects; Crystal growth; Gas emissions; Metallorganic chemical vapor deposition; Microstructure; Optoelectronic devices; Photoluminescence; Semiconductor devices; Solar cells; Transmission electron micr A1. Photoluminescence; A1. Transmission electron microscopy; A3. Metalorganic chemical vapor deposition; B1. GaAsN
dc.titleMetalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties
dc.typeJournal article
local.bibliographicCitation.lastpage97
local.bibliographicCitation.startpage92
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSun, B Q, University of New South Wales
local.contributor.affiliationGal, Michael, University of New South Wales
local.contributor.affiliationOuyang, L, University of Sydney
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.authoremailu9302338@anu.edu.au
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub13826
local.identifier.citationvolume264
local.identifier.doi10.1016/j.jcrysgro.2003.12.068
local.identifier.scopusID2-s2.0-1342327995
local.identifier.uidSubmittedByMigrated
local.type.statusPublished Version

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