Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties
Date
2004
Authors
Gao, Qiang
Jagadish, Chennupati
Sun, B Q
Gal, Michael
Ouyang, L
Zou, Jin
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states.
Description
Keywords
Keywords: Charge coupled devices; Computer simulation; Crystal defects; Crystal growth; Gas emissions; Metallorganic chemical vapor deposition; Microstructure; Optoelectronic devices; Photoluminescence; Semiconductor devices; Solar cells; Transmission electron micr A1. Photoluminescence; A1. Transmission electron microscopy; A3. Metalorganic chemical vapor deposition; B1. GaAsN
Citation
Collections
Source
Journal of Crystal Growth
Type
Journal article