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Electrical properties of atomic layer deposited Al 2 O 3 with anneal temperature for surface passivation

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dc.contributor.authorSuh, Dong Chul
dc.contributor.authorLiang, Wensheng
dc.date.accessioned2015-12-13T22:29:05Z
dc.date.issued2013
dc.date.updated2016-02-24T09:22:30Z
dc.description.abstractThe electrical characteristics of Al2O3 layers prepared by the atomic layer deposition technique using O3, H 2O, and plasma O2, as oxidants are investigated through capacitance-voltage measurements of metal-insulator-semiconductor capacitors. Particular e
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/1885/74516
dc.publisherElsevier
dc.sourceThin Solid Films
dc.subjectKeywords: Anneal temperatures; Capacitance voltage measurements; Constant voltage stress; Electrical characteristic; Emitter saturation current density; Low temperature annealing; Metal insulator semiconductor capacitors; Surface passivation; Annealing; Atomic laye Al2O3; Anneal temperature; Atomic layer deposition; Emitter saturation current density; Surface passivation
dc.titleElectrical properties of atomic layer deposited Al 2 O 3 with anneal temperature for surface passivation
dc.typeJournal article
local.bibliographicCitation.lastpage316
local.bibliographicCitation.startpage309
local.contributor.affiliationSuh, Dong Chul, College of Engineering and Computer Science, ANU
local.contributor.affiliationLiang, Wensheng, College of Engineering and Computer Science, ANU
local.contributor.authoruidSuh, Dong Chul, u5074214
local.contributor.authoruidLiang, Wensheng, u4804098
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationf5625xPUB4164
local.identifier.citationvolume539
local.identifier.doi10.1016/j.tsf.2013.05.082
local.identifier.scopusID2-s2.0-84879418424
local.identifier.thomsonID000321111100051
local.type.statusPublished Version

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