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Electrical properties of atomic layer deposited Al 2 O 3 with anneal temperature for surface passivation

Date

Authors

Suh, Dong Chul

Liang, Wensheng

Publisher

Elsevier

Abstract

The electrical characteristics of Al2O3 layers prepared by the atomic layer deposition technique using O3, H 2O, and plasma O2, as oxidants are investigated through capacitance-voltage measurements of metal-insulator-semiconductor capacitors. Particular e

Keywords

Keywords: Anneal temperatures; Capacitance voltage measurements; Constant voltage stress; Electrical characteristic; Emitter saturation current density; Low temperature annealing; Metal insulator semiconductor capacitors; Surface passivation; Annealing; Atomic laye Al2O3; Anneal temperature; Atomic layer deposition; Emitter saturation current density; Surface passivation

URI

http://hdl.handle.net/1885/74516

Collections

ANU Research Publications

Source

Thin Solid Films

Type

Journal article

DOI

10.1016/j.tsf.2013.05.082

Restricted until

2037-12-31

Downloads

File

Description

01_Suh_Electrical_properties_of_2013.pdf (1.45 MB)

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