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Comparing InSb, InAs and InSb/InAs nanowire MOSFETs

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dc.contributor.authorNilsson, H
dc.contributor.authorCaroff, Philippe
dc.contributor.authorLind, Erik
dc.contributor.authorThelander, Claes
dc.contributor.authorWernersson, Lars-Erik
dc.coverage.spatialUniversity Park, PA
dc.date.accessioned2015-12-13T22:53:20Z
dc.date.createdJune 22-24 2009
dc.date.issued2009
dc.date.updated2016-02-24T08:34:59Z
dc.description.abstractVarious channel materials are considered forth e III-V MOSFETs [1]. Among the III A/s, InSb has the highest mobility and the lowest effective mass. We may hence expect a large source injection velocity, but also parasitic leakage due to tunneling. Furthermore, the low density of states in the conduction band implies a small quantum capacitance. These effects may be studied in nanowire devices. So far, there are very few reports on detailed st udies o f transport in InSb nanowire MOSFETs [2], and the possibility to form heterostructures has not been exploited. In this paper, we present detailed characterization of InSb nanowire MOSFETs that is combined with a comparison to InAs and InSb/lnAs nanowire MOSFETs formed on the same nanowire.
dc.identifier.isbn9781424435289
dc.identifier.urihttp://hdl.handle.net/1885/81762
dc.publisherIEEE
dc.relation.ispartofseries67th Device Research Conference, DRC 2009
dc.sourceDevice Research Conference - Conference Digest, DRC
dc.subjectKeywords: Channel materials; Heterostructures; InAs; Injection velocity; InSb nanowire; Low density; MOSFETs; Nanowire devices; Nanowire MOSFETs; Parasitic leakages; Quantum capacitance; Electron mobility; Heterojunctions; Indium antimonides; MOSFET devices; Semico
dc.titleComparing InSb, InAs and InSb/InAs nanowire MOSFETs
dc.typeConference paper
local.bibliographicCitation.lastpage22
local.bibliographicCitation.startpage21
local.contributor.affiliationNilsson, H, Lund University
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLind, Erik, Lund University
local.contributor.affiliationThelander, Claes, Lund University
local.contributor.affiliationWernersson, Lars-Erik, Lund University
local.contributor.authoruidCaroff, Philippe, u5309137
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationf5625xPUB10065
local.identifier.doi10.1109/DRC.2009.5354844
local.identifier.scopusID2-s2.0-76549098523
local.type.statusPublished Version

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